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| savantic semiconductor product specification silicon npn power transistors BUY69A buy69b buy69c d escription with to-3 package high voltage capability applications for horizontal deflection output stage of ctv receivers and high voltalge, fast switching and industrial applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit BUY69A 1000 buy69b 800 v cbo collector-base voltage buy69c open emitter 500 v BUY69A 400 buy69b 325 v ceo(sus) collector-emitter sustaining voltage buy69c open base 200 v v ebo emitter-base voltage open collector 8 v i c collector current 10 a i cm collector current-peak 15 a i b base current 3.0 a p d total power dissipation t c =25 100 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.75 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUY69A buy69b buy69c characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit BUY69A 400 buy69b 325 v ceo(sus) collector-emitter sustaining voltage buy69c i c =100ma ; i b =0 200 v BUY69A 1000 buy69b 800 v cbo collector-base voltage buy69c i c =1ma; i e =0 500 v v cesat collector-emitter saturation voltage i c =8a ;i b =2.5a 3.3 v v besat base-emitter saturation voltage i c =8a ;i b =2.5a 2.2 v i ces collector cut-off current v ce =rated v ces ; v be =0 1.0 ma i ebo emitter cut-off current v eb =8v; i c =0 1.0 ma h fe dc current gain i c =2.5a ; v ce =10v 15 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 10 mhz switching times t r rise time 0.3 s t s storage time 1.8 s t f fall time i c =5a ;i b1 =-i b2 =1.0a; v cc =250v 1.0 s savantic semiconductor product specification 3 silicon npn power transistors BUY69A buy69b buy69c package outline fig.2 outline dimensions |
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